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Applied Physics Letters

Volumn 98, Issue 11, 2011, Pages

Temperature stress on pristine ZnO nanowire field effect transistor

(4) Kim, Kyoungwon a,b Debnath, Pulak Chandra a Kim, Sangsig b Lee, Sang Yeol a

a Korea Institute of Science and Technology (South Korea)

b Korea University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARRHENIUS MODELS; DEEP LEVEL TRAP; DEVICE STABILITY; FREE CARRIERS; LARGE SHIFTS; TEMPERATURE DEPENDENCIES; TEMPERATURE STRESS; THERMALLY ACTIVATED; THERMALLY ACTIVATED PROCESS; ZNO; ZNO NANOWIRES;

ACTIVATION ENERGY; FIELD EFFECT TRANSISTORS; MESFET DEVICES; NANOWIRES;

ZINC OXIDE;

EID: 79952919306 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3567795 Document Type: Article

Times cited : (14)

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