Back-gate ZnO nanowire field-effect transistors each with a top shaped Au contact

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Yang, W Q ^a   Dai, L ^a   Ma, R M ^a   Liu, C ^a   Sun, T ^a   Qin, G G ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC WIRE; HIGH ELECTRON MOBILITY TRANSISTORS; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; MISFET DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; OPTICAL DESIGN; SEMICONDUCTING ZINC COMPOUNDS; TRANSISTORS; ZINC; ZINC ALLOYS; ZINC OXIDE;

AMERICAN INSTITUTE OF PHYSICS (AIP); BACK GATES; ENHANCEMENT MODE (E MODE); FIELD EFFECT TRANSISTOR (FET); METAL-INSULATOR-SEMICONDUCTOR (MIS); ON/OFF RATIOS; VAPOR-PHASE TRANSPORT METHOD; ZNO NANOWIRE; ZNO NANOWIRES;

FIELD EFFECT TRANSISTORS;

EID: 48249089754     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2959075     Document Type: Article

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