Generation and growth of atomic-scale roughness at surface and interface of silicon dioxide thermally grown on atomically flat Si surface

Key Engineering Materials

Volumn 470, Issue , 2011, Pages 110-116

  Hayashi, Yuusuke ^a   Hasunuma, Ryu ^a   Yamabe, Kikuo ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Oxidation; Roughness; Silicon; Uniformity

Indexed keywords

ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; NANOELECTRONICS; OXIDATION; SILICA; SILICON; SILICON OXIDES; THERMOOXIDATION;

ATOMIC SCALE ROUGHNESS; GENERATION AND GROWTH; INITIAL OXIDATION; RE-OXIDATION; SI/SIO2 INTERFACE; SURFACE AND INTERFACES; THERMAL OXIDATION; UNIFORMITY;

SURFACE ROUGHNESS;

EID: 79952774590     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/KEM.470.110     Document Type: Conference Paper

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