Selective Growth of Cu Nanowires on Si(111) Substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 10 A, 2003, Pages

  Tokuda, Norio ^a   Hojo, Daisuke ^a   Yamasaki, Satoshi ^b   Miki, Kazushi ^b,c   Yamabe, Kikuo ^a,d  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d Tsukuba Research Center for Interdisciplinary Materials Science   (Japan)

Author keywords

AFM; Atomic step; Cu; Electrochemical; Electroless deposition; Nanowire; Si; Surface

Indexed keywords

ADSORPTION; ASPECT RATIO; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; ELECTROLESS PLATING; POSITIVE IONS; SURFACE ROUGHNESS;

NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 0344514170     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1210     Document Type: Article

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