Anisotropic kinetics of vacancy diffusion and annihilation on Si(001) surfaces studied by scanning reflection electron microscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 55, Issue 15, 1997, Pages 9699-9705

  Watanabe, Heiji ^a   Ichikawa, Masakazu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000567375     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.9699     Document Type: Article

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