Atomic topography change of SiO2/Si interfaces during thermal oxidation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 5, 2002, Pages

  Hojo, Daisuke ^a   Tokuda, Norio ^a   Yamabe, Kikuo ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

AFM; Interface; Layer by layer; Oxidation; Silicon; Silicon dioxide; Step; Terrace

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; ROUGHNESS MEASUREMENT; SEMICONDUCTING SILICON; SILICA; SILICON WAFERS; THERMOOXIDATION; ULSI CIRCUITS; X RAY DIFFRACTION ANALYSIS;

ATOMIC TOPOGRAPHY CHANGE; ROOT MEAN SQUARE; SILICON SURFACE; STEP STRUCTURE; TERRACE STRUCTURE;

INTERFACES (MATERIALS);

EID: 0036576126     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l505     Document Type: Letter

References (16)