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Chemical Vapor Deposition

Volumn 17, Issue 1-3, 2011, Pages 37-44

Growth of the initial atomic layers of Ta-N films during atomic layer deposition on silicon-based substrates

(4) Strehle, Steffen a Schmidt, Daniela a Albert, Matthias a Bartha, Johann W a

a DRESDEN UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

ALD; in situ XPS; TaN ultra thin films; TBDETCp; TBTDET

Indexed keywords

ALD; IN-SITU XPS; TAN ULTRA-THIN FILMS; TBDETCP; TBTDET;

ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; ATOMS; FILM GROWTH; METALLIC FILMS; OXYGEN; SILICON; STOICHIOMETRY; SUBSTRATES; TANNING; TANTALUM COMPOUNDS; ULTRATHIN FILMS; VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

TANTALUM;

EID: 79952742816 PISSN: 09481907 EISSN: 15213862 Source Type: Journal
DOI: 10.1002/cvde.201006874 Document Type: Article

Times cited : (9)

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