Low temperature two-step atomic layer deposition of tantalum nitride for cu diffusion barrier

Journal of the Electrochemical Society

Volumn 156, Issue 11, 2009, Pages

  Kwon, Jung Dae ^a   Jeong, Seong Jun ^b   Kang, Jae Wook ^a   Kim, Do Geun ^a   Kim, Jong Kuk ^a   Rha, Jong Joo ^a   Nam, Kee Seok ^a   Kwon, Se Hun ^c  

^a Korea Institute of Material Science   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Pusan National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CU DIFFUSION BARRIER; DEPOSITION CYCLES; DEPOSITION TEMPERATURES; ELECTRICAL RESISTIVITY; HYDROGEN PLASMAS; LOW TEMPERATURES; TANTALUM NITRIDES;

CHEMICAL REACTIONS; ELECTRIC CONDUCTIVITY; HYDROGEN; NITRIDES; TANNING; TANTALUM; TANTALUM COMPOUNDS; THIN FILM DEVICES; THIN FILMS;

DEPOSITION;

EID: 70349745544     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3223989     Document Type: Article

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