Linearity characteristics of microwave-power GaN HEMTs

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 2 II, 2003, Pages 660-664

  Nagy, Walter ^a   Brown, Jeff ^a   Borges, Ricardo ^a   Singhal, Sameer ^a  

^a NITRONEX CORPORATION   (United States)

Author keywords

GaN high electron mobility transistor (HEMTs); Linearity; RF power transistors

Indexed keywords

GALLIUM NITRIDE; MICROWAVES; SILICON; SUBSTRATES;

POWER TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037291763     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.807684     Document Type: Article

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