메뉴 건너뛰기




Volumn 108, Issue 4, 2010, Pages

Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; ALN; ALN BUFFER; CRYSTALLOGRAPHIC ORIENTATIONS; GAN FILM; GAN THIN FILMS; GROUP III; GROWTH DIRECTIONS; III-NITRIDE; KINETIC CONDITIONS; NITRIDE FILMS; PLANE SAPPHIRE; RICH CONDITIONS; SAPPHIRE SURFACE; THREADING DISLOCATION; TWINNING DEFECT;

EID: 77956328466     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3475521     Document Type: Conference Paper
Times cited : (14)

References (17)
  • 1
    • 79957932778 scopus 로고    scopus 로고
    • APPLAB 0003-6951,. 10.1063/1.1484543
    • H. M. Ng, Appl. Phys. Lett. APPLAB 0003-6951 80, 4369 (2002). 10.1063/1.1484543
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 4369
    • Ng, H.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.