Wafer bonding technology in nitride semiconductors for applications in energy and communications

ECS Transactions

Volumn 33, Issue 4, 2010, Pages 125-135

  Ryu, K ^a   Chung, J W ^a   Lu, B ^a   Palacios, T ^a  

^a Department of Electrical Engineering and Computer Science   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; MOSFET DEVICES; NITRIDES; SILICA; SILICON OXIDES; SILICON WAFERS; THERMOELECTRIC EQUIPMENT; TRANSISTORS; WIDE BAND GAP SEMICONDUCTORS;

BONDING TECHNOLOGY; BREAKDOWN CHARACTERISTICS; ELECTRONIC DEVICE; ENABLING TECHNOLOGIES; HETEROGENEOUS MATERIALS; HIGH-FREQUENCY APPLICATIONS; NITRIDE SEMICONDUCTORS; WAFERBONDING TECHNOLOGY;

WAFER BONDING;

EID: 79952680081     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3483500     Document Type: Conference Paper

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