Schottky-drain technology for AlGaN/GaN high-electron mobility transistors

IEEE Electron Device Letters

Volumn 31, Issue 4, 2010, Pages 302-304

  Lu, Bin ^a   Piner, Edwin L ^b   Palacios, Tomás ^a  

^a Department of Electrical Engineering and Computer Science   (United States)

^b NITRONEX CORPORATION   (United States)

Author keywords

Buffer breakdown; GaN on silicon; High electron mobility transistor (HEMT); Power electronics; Schottky drain

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; BREAKDOWN VOLTAGE; CONTACT MORPHOLOGY; DRAIN CONTACTS; DRAIN TECHNOLOGY; GAN BUFFER; GAN-ON-SILICON; MAXIMUM BREAKDOWN VOLTAGE; METALLIZATIONS; SCHOTTKY; SI SUBSTRATES;

ELECTRIC BREAKDOWN; ELECTRON MOBILITY; ELECTRONS; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77950078519     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2040704     Document Type: Article

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