Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off

Applied Physics Letters

Volumn 75, Issue 13, 1999, Pages 1887-1889

  Wong, W S ^a   Cho, Y ^a   Weber, E R ^a   Sands, T ^a   Yu, K M ^b   Kruger J ^b   Wengrow, A B ^c   Cheung, N W ^d  

^a Lawrence Berkeley National Laboratory   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCIMER LASERS; HEAT TREATING FURNACES; HETEROJUNCTIONS; LASER PULSES; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THIN FILMS;

FULL WIDTH AT HALF MAXIMUM (FWHM); GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0032606210     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124861     Document Type: Article

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