Integration of GaN with Si using a AuGe-mediated wafer bonding technique

Applied Physics Letters

Volumn 77, Issue 24, 2000, Pages 3959-3961

  Funato, Mitsuru ^a   Fujita, Shizuo ^a   Fujita, Shigeo ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008875540     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1331638     Document Type: Article

References (13)

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