Silicon multi-branch nanostructures for decent field emission and excellent electrical transport

Nanotechnology

Volumn 22, Issue 14, 2011, Pages

  Sun, Min ^a   Gao, Yihua ^a   Zhi, Chunyi ^b   Bando, Yoshio ^b   Golberg, Dmitri ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDES; ELECTRIC TRANSPORT PROPERTIES; ELECTRICAL RESISTANCES; ELECTRICAL TRANSPORT; ELECTRICAL TRANSPORT MEASUREMENTS; ELECTRODE CONTACTS; EMISSION CURRENT; FIELD ELECTRON EMISSIONS; HIGH FIELD; NANOMATERIAL; ORDERED ARRAY; THERMAL OXIDATION; THRESHOLD FIELDS; TURN-ON FIELD; VACUUM-ANNEALING; VOLTAGE CURVE;

ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; FIELD EMISSION; NANOSTRUCTURES; PROTECTIVE COATINGS; TRANSPORT PROPERTIES;

AMORPHOUS SILICON;

EID: 79952661863     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/14/145705     Document Type: Article

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