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Applied Physics Letters

Volumn 98, Issue 10, 2011, Pages

In situ strain relaxation comparison between GaAsBi and GaInAs grown by molecular-beam epitaxy

(3) France, R a Jiang, C S a Ptak, A J a

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONALLY GRADED BUFFERS; ELASTIC ENERGY; IN-SITU; LATTICE-MISMATCHED; MATERIAL GROWTH; RELAXATION BEHAVIORS; RESIDUAL STRAINS; WAFER CURVATURE;

ELASTICITY; EPITAXIAL GROWTH; MOLECULAR BEAMS; SURFACE ROUGHNESS;

STRAIN RELAXATION;

EID: 79952657418 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3562952 Document Type: Article

Times cited : (17)

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