Visible light-emitting diodes grown on optimized ▽x[InxGa1-x]P/GaP epitaxial transparent substrates with controlled dislocation density

Journal of Electronic Materials

Volumn 29, Issue 8, 2000, Pages

  Kim, Andrew Y ^a   Groenert, Michael E ^a   Fitzgerald, Eugene A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSPARENCY;

GALLIUM PHOSPHIDE; INDIUM GALLIUM PHOSPHIDE;

LIGHT EMITTING DIODES;

EID: 0034249491     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0173-6     Document Type: Article

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