SCOPUS 정보 검색 플랫폼

Volumn 519, Issue 9, 2011, Pages 2889-2893

Spectroscopic ellipsometry characterization of high-k gate stacks with Vt shift layers

(6) Di, Ming a Bersch, Eric a Clark, Robert b Consiglio, Steven b Leusink, Gert b Diebold, Alain C a

a STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

Capping layer; Film thickness; HfO2; High k dielectrics; La2O3; Spectroscopic ellipsometry; Vt shift layer; X ray reflectivity

Indexed keywords

CAPPING LAYER; HFO2; HIGH-K DIELECTRICS; LA2O3; VT SHIFT LAYER; X-RAY REFLECTIVITY;

DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; REFLECTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY; THICKNESS MEASUREMENT; X RAYS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 79952622004 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.12.060 Document Type: Article

Times cited : (3)

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