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Volumn 131, Issue 6, 2011, Pages 1184-1188

Comparative study of porous amorphous a-Si1-xCx films and a-Si1-xCx membranes on structural and luminescence properties

(10) Boukezzata, A a Nezzal, G b Guerbous, L c Keffous, A a Gabouze, N a Belkacem, Y a Manseri, A a Brighet, A b Kechouane, M b Menari, H a

a L'Unite de Developpement de la Technologie du Silicium (Algeria)

b UNIVERSITY OF SCIENCES AND TECHNOLOGY HOUARI BOUMEDIENE (Algeria)

c CENTRE DE RECHERCHE NUCLÉAIRE D ALGER (Algeria)

Author keywords

Electrochemical; Membrane; Porous film; Silicon carbide

Indexed keywords

ANODIC DISSOLUTION; COMPARATIVE STUDIES; CYLINDRICAL STRUCTURE; DC MAGNETRON SPUTTERING; DIFFUSION CURRENTS; ELECTROCHEMICAL; EXPERIMENTAL CONDITIONS; FIRST ORDER; FLUORIDE CONCENTRATIONS; FLUORIDE SOLUTION; LUMINESCENCE PROPERTIES; P-TYPE; POROUS ETCHING; POROUS FILM; POROUS LAYERS; POROUS NETWORKS; POROUS SIC; PREPARATION CONDITIONS; SEM OBSERVATION; STRUCTURAL AND ELECTRICAL PROPERTIES; SURFACE FINISHES;

AMORPHOUS SILICON; CYLINDERS (SHAPES); DISSOLUTION; ELECTRIC PROPERTIES; ELECTROCHEMICAL ETCHING; ELECTROCHEMISTRY; LUMINESCENCE; PASSIVATION; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE;

POROUS SILICON;

EID: 79952589334 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/j.jlumin.2011.02.029 Document Type: Article

Times cited : (8)

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