Electrochemical etching of n-type 15R-SiC and 6H-SiC without UV illumination

Solid State Communications

Volumn 146, Issue 9-10, 2008, Pages 409-411

  Wang, Guanghong ^a   Shi, Chengying ^a   Cao, Xuewei ^a   Wang, Hui ^a   Feng, Min ^a   Hao, Jianmin ^b   Wang, Yufang ^a  

^a NANKAI UNIVERSITY   (China)

^b CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION   (China)

Author keywords

A. Nanostructures; D. Phonons; E. Inelastic light scattering

Indexed keywords

ELECTROCHEMICAL ETCHING; INELASTIC SCATTERING; LIGHTING; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; X RAY DIFFRACTION;

6H-SIC; SEMI-CYLINDRICAL STRUCTURE;

POROUS MATERIALS;

EID: 43049159552     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.03.022     Document Type: Article

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