Effective carrier density in porous silicon carbide

Semiconductor Science and Technology

Volumn 19, Issue 3, 2004, Pages 319-322

  Ivanov, P A ^a   Mynbaeva, M G ^a   Saddow, S E ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPENSATION EFFECTS; SCHOTTKY CONTACTS;

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY;

SILICON CARBIDE;

EID: 1642415050     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/3/005     Document Type: Article

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