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Volumn 15, Issue 12, 2005, Pages 2243-2248

Single crystal 6H-SiC MEMS fabrication based on smart-cut technique

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; SENSORS; SINGLE CRYSTALS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

EID: 27944454443     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/15/12/005     Document Type: Article
Times cited : (31)

References (10)
  • 1
    • 0032139423 scopus 로고    scopus 로고
    • Silicon carbide MEMS for harsh environments
    • Mehregany M, Zorman C A, Rajan N and Wu C H 1998 Silicon carbide MEMS for harsh environments Proc. IEEE 86 1594-610
    • (1998) Proc. IEEE , vol.86 , Issue.8 , pp. 1594-1610
    • Mehregany, M.1    Zorman, C.A.2    Rajan, N.3    Wu, C.H.4
  • 2
    • 0038426995 scopus 로고    scopus 로고
    • High temperature electronics-a role for wide bandgap semiconductors?
    • Neudeck P G, Okojie R S and Chen L-Y 2002 High temperature electronics-a role for wide bandgap semiconductors? Proc. IEEE 90 1065-76
    • (2002) Proc. IEEE , vol.90 , Issue.6 , pp. 1065-1076
    • Neudeck, P.G.1    Okojie, R.S.2    Chen, L.-Y.3
  • 7
    • 2142711606 scopus 로고    scopus 로고
    • Single crystal silicon MEMS fabrication based on smart-cut technique
    • Du J, Ko W H and Young D J 2004 Single crystal silicon MEMS fabrication based on smart-cut technique Sensors Actuators 112 116-21
    • (2004) Sensors Actuators , vol.112 , pp. 116-121
    • Du, J.1    Ko, W.H.2    Young, D.J.3
  • 8
    • 0034468212 scopus 로고    scopus 로고
    • Fabrication of silicon and oxide membranes over cavities using ion-cut layer transfer
    • Yun C-H and Cheung N W 2000 Fabrication of silicon and oxide membranes over cavities using ion-cut layer transfer IEEE J. Microelectromech. Syst. 9 474-7
    • (2000) IEEE J. Microelectromech. Syst. , vol.9 , Issue.4 , pp. 474-477
    • Yun, C.-H.1    Cheung, N.W.2
  • 9
    • 0000268706 scopus 로고    scopus 로고
    • Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates
    • Tong Q-Y, Gutjahr K, Hopfe S, Gösele U and Lee T-H 1997 Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates Appl. Phys. Lett. 70 1390-2
    • (1997) Appl. Phys. Lett. , vol.70 , Issue.11 , pp. 1390-1392
    • Tong, Q.-Y.1    Gutjahr, K.2    Hopfe, S.3    Gösele, U.4    Lee, T.-H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.