Raman-scattering and structure investigations on porous SiC layers

Journal of Applied Physics

Volumn 97, Issue 3, 2005, Pages

  Torchynska, T V ^a   Hernandez, A Vivas ^a   Cano, A Diaz ^a   Jimenez Sandoval S ^a   Ostapenko, S ^b   Mynbaeva, M ^c  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b UNIVERSITY OF SOUTH FLORIDA   (United States)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC COUPLING; HETEROEPITAXIAL GROWTH; RAMAN SCATTERING SPECTROSCOPY; SCANNING ACOUSTIC MICROSCOPY (SAM);

ACOUSTIC IMPEDANCE; CURRENT DENSITY; DIFFUSION; LIGHT EMITTING DIODES; LIGHT SCATTERING; MATHEMATICAL MODELS; MOSFET DEVICES; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS; SURFACE ROUGHNESS; THIN FILMS;

POROUS SILICON;

EID: 13644274770     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1840095     Document Type: Article

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