Cathodoluminescence of yellow and blue luminescence in undoped semi-insulating GaN and n-GaN

Chinese Physics Letters

Volumn 28, Issue 3, 2011, Pages

  Hou, Qi Feng ^a   Wang, Xiao Liang ^a,b   Xiao, Hong Ling ^a,b   Wang, Cui Mei ^a,b   Yang, Cui Bai ^a,b   Yin, Hai Bo ^a   Li, Jin Min ^a   Wang, Zhan Guo ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; EDGE DISLOCATIONS; GRAIN BOUNDARIES; III-V SEMICONDUCTORS; INSULATION;

BEAM ENERGIES; BLUE LUMINESCENCE; BLUE LUMINESCENCE BANDS; DISLOCATIONS DENSITIES; EDGE TYPE DISLOCATIONS; GAN LAYERS; NEAR BAND EDGE; SEMI-INSULATING GAN; YELLOW LUMINESCENCE; YELLOW LUMINESCENCE BANDS;

GALLIUM NITRIDE;

EID: 79952504655     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/28/3/037102     Document Type: Article

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