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Journal of Luminescence

Volumn 87, Issue , 2000, Pages 1155-1157

Cathodoluminescence studies of in-plane and in-depth properties of GaN epilayers

(3) Godlewski, M a Goldys, E M b Phillips, M R c

a INSTITUTE OF PHYSICS (Poland)

b MACQUARIE UNIVERSITY (Australia)

c UNIVERSITY OF TECHNOLOGY SYDNEY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRON TRANSITIONS; EXCITONS; GRAIN BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; THIN FILMS;

COLUMNAR STRUCTURE; GALLIUM NITRIDE;

CATHODOLUMINESCENCE;

EID: 0033727964 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-2313(99)00577-3 Document Type: Article

Times cited : (4)

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