Dynamics of bound-exciton luminescences from epitaxial GaN

Applied Physics Letters

Volumn 68, Issue 3, 1996, Pages 415-417

  Eckey, L ^a   Holst, J Ch ^a   Maxim, P ^a   Heitz, R ^a   Hoffmann, A ^a   Broser, I ^a   Meyer, B K ^b   Wetzel, C ^b   Mokhov, E N ^c   Baranov, P G ^c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ENERGY TRANSFER; EXCITONS; INTERFACES (MATERIALS); LOW TEMPERATURE OPERATIONS; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SILICON CARBIDE; SUBLIMATION;

BOUND EXCITON LUMINESCENCE; DONOR ACCEPTOR PAIR RECOMBINATION; FREE EXCITON LUMINESCENCE; GALLIUM NITRIDE; NONRADIATIVE RELAXATION; OSCILLATOR STRENGTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029732151     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116703     Document Type: Article

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