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Volumn 107, Issue 2, 2010, Pages

Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films

(11) Xu, F J a Shen, B a Lu, L a Miao, Z L a Song, J a Yang, Z J a Zhang, G Y a Hao, X P b Wang, B Y b Shen, X Q c Okumura, H c

a PEKING UNIVERSITY (China)

b INSTITUTE OF HIGH ENERGY PHYSICS (China)

c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; CONCENTRATION OF; DIFFERENT ORIGINS; ELECTRONS AND HOLES; GAN FILM; HIGH-RESISTANCE GAN; METALORGANIC CHEMICAL VAPOR DEPOSITION; MONOENERGETIC; POSITRON DIFFUSION; SPACE LOCALIZATION; YELLOW LUMINESCENCE;

DEFECTS; GALLIUM ALLOYS; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS;

GALLIUM NITRIDE;

EID: 75749147671 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3294965 Document Type: Article

Times cited : (58)

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