Various recipes of SiNx passivated AlGaN/GaN high electron mobility transistors in correlation with current slump

Chinese Physics Letters

Volumn 26, Issue 11, 2009, Pages

  Yang, Ling ^a   Hao, Yue ^a   Ma, Xiao Hua ^a   Quan, Si ^a   Hu, Gui Zhou ^a   Jiang, Shou Gao ^a   Yang, Li Yuan ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRIC CURRENT MEASUREMENT; ELECTRONS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; INTERFACE STATES; PASSIVATION; TWO DIMENSIONAL ELECTRON GAS;

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CHEMICAL VAPOR; CURRENT COLLAPSE; CURRENT SLUMP; CURRENT VOLTAGE CURVE; DC CURRENT; DEPOSITION PROCESS; PULSED CURRENT VOLTAGE; SIN X PASSIVATION; VAPOUR PHASE DEPOSITIONS;

ELECTRON MOBILITY;

EID: 70450228812     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/26/11/117104     Document Type: Article

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