Degradation of AlGaN/GaN high electron mobility transistors with different AlGaN layer thicknesses under strong electric field

Chinese Physics Letters

Volumn 27, Issue 2, 2010, Pages

  Yang, Ling ^a   Ma, Jing Jing ^a   Zhu, Cheng ^a   Hao, Yue ^a   Ma, Xiao Hua ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; DEGRADATION; DRAIN CURRENT; ELECTRIC FIELDS; ELECTRIC RESISTANCE; ELECTRON MOBILITY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; SEMICONDUCTOR ALLOYS;

ALGAN LAYERS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BARRIER LAYERS; BARRIER THICKNESS; ELECTRICAL FIELD; GATE CHANNEL; HIGH ELECTRIC FIELDS; LAYER THICKNESS; SERIES RESISTANCES; STRONG ELECTRIC FIELDS;

ALUMINUM GALLIUM NITRIDE;

EID: 77049096041     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/27/2/027102     Document Type: Article

References (7)

1. Lu W, Yang J, Khan M A and Adesida I 2001 IEEE Trans. Electron. Devices 48 581
2. Mishra U K, Parikh P and Wu Y F 2002 Proc. IEEE 90 1022
3. Jessen G H, Fitch R C, Gillespie J K, Via G D, Moser N A, Yannuzzi M J, Crespo A, Sewell J S, Dettmer R W, Jenkins T J, Davis R F 2003 IEEE Electron. Device Lett. 24 677
4. Delage S L and Dua C 2003 Microelectron. Reliab. 43 1705
5. Mishra U K, Shen L, Kazior T E and Wu Y F 2008 Proc. IEEE 96 287
6. Meneghesso G, Verzellesi G, Danesin F, Rampazzo F, Zanon F and Tazzoli A 2008 IEEE Trans. Dev. Mater. Reliab. 8 332
7. Wu Y F, Saxler A, Moore M, Smith R P, Sheppard S and Chavarkar P M 2004 IEEE Electron. Dev. Lett. 25 3