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Volumn 88, Issue 5, 2011, Pages 802-806
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Electrical characterization and morphological properties of AlN films prepared by dc reactive magnetron sputtering
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Author keywords
Aluminum nitride thin films; Electrical properties; MIS devices; Reactive DC sputtering; Surface morphology
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Indexed keywords
ALN;
ALN FILMS;
ALUMINUM NITRIDE THIN FILMS;
C-V CURVE;
CAPACITANCE VOLTAGE;
CHARACTERIZATION TECHNIQUES;
CRYSTALLOGRAPHIC ORIENTATIONS;
CURRENT VOLTAGE;
DC DISCHARGES;
DC REACTIVE MAGNETRON SPUTTERING;
DC SPUTTERING;
DIELECTRIC CONSTANT VALUES;
DIELECTRIC/SEMICONDUCTOR INTERFACE;
ELECTRICAL CHARACTERIZATION;
ELECTRICAL PROPERTIES;
HIGH FREQUENCY;
METAL-INSULATOR-SEMICONDUCTORS;
MORPHOLOGICAL PROPERTIES;
NITROGEN CONCENTRATIONS;
SPUTTERING POWER;
TARGET POWER;
ALUMINUM;
ALUMINUM COATINGS;
ALUMINUM NITRIDE;
DC POWER TRANSMISSION;
DEPOSITION RATES;
ELECTRIC PROPERTIES;
GAS MIXTURES;
METAL INSULATOR BOUNDARIES;
MIS DEVICES;
MORPHOLOGY;
NITRIDES;
PERMITTIVITY;
REFRACTIVE INDEX;
SURFACE ROUGHNESS;
THIN FILMS;
VAPOR DEPOSITION;
SURFACE MORPHOLOGY;
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EID: 79952486857
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2010.06.045 Document Type: Conference Paper |
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Times cited : (56)
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References (17)
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