Polytype stability in nitrogen-doped PVT - Grown 2″ - 4ls

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Rost, H J ^a   Doerschel, J ^a   Irmscher, K ^a   Rossberg M ^a   Schulz, D ^a   Siche, D ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

A1. Defects; A1. Doping; A2. Growth from vapour; B2. Semiconducting silicon compounds

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; INTERFACIAL ENERGY; NITROGEN; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE; SINGLE CRYSTALS; THERMAL GRADIENTS;

GROWTH FROM VAPOR; PHYSICAL VAPOR TRANSPORT (PVT) GROWTH; POLYTYPE STABILITY; STACKING FAULTS (SF);

CRYSTAL GROWTH;

EID: 15944408349     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.018     Document Type: Conference Paper

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