SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 318, Issue 1, 2011, Pages 394-396

Defect structure of 4H silicon carbide ingots

(6) Lebedev, A O a Avrov, D D b Bulatov, A V b Dorozhkin, S I b Tairov, Yu M b Fadeev, A Yu b

a IOFFE INSTITUTE (Russian Federation)

b SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI (Russian Federation)

Author keywords

A1. Defects; A2. Seed crystals; A3. Physical vapor deposition processes; B1. Silicon carbide

Indexed keywords

4H SILICON CARBIDE; A1. DEFECTS; A2. SEED CRYSTALS; A3. PHYSICAL VAPOR DEPOSITION PROCESSES; ANTIPHASE DOMAINS; B1. SILICON CARBIDE; DOMAIN STRUCTURE; HIGHER ORDER; POLYTYPES; THREADING DEFECTS;

CRYSTALS; INCLUSIONS; INGOTS; PHYSICAL VAPOR DEPOSITION; SILICON CARBIDE;

DEFECTS;

EID: 79952735041 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.10.166 Document Type: Conference Paper

Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.