Polytype control in 6H-SiC grown via sublimation method

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 95-98

  Li, Xianxiang ^a   Jiang, Shouzhen ^a   Hu, Xiaobo ^a   Dong, Jie ^a   Li, Juan ^a   Chen, Xiufang ^a   Wang, Li ^a   Xu, Xiangang ^a   Jiang, Minhua ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

Growth interface; Growth rate; Polytype; Step flow growth mechanism

Indexed keywords

GROWTH RATE; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SILICON CARBIDE; SINGLE CRYSTALS; SUBLIMATION;

GROWTH INTERFACES; POLYTYPES; STEP FLOW GROWTH; STEP FLOW GROWTH MECHANISM;

INGOTS;

EID: 37149031768     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.95     Document Type: Conference Paper

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