Investigation of heavily nitrogen-doped n+ 4H-SiC crystals grown by physical vapor transport

Journal of Crystal Growth

Volumn 311, Issue 6, 2009, Pages 1475-1481

  Ohtani, Noboru ^a   Katsuno, Masakazu ^a   Nakabayashi, Masashi ^a   Fujimoto, Tatsuo ^a   Tsuge, Hiroshi ^a   Yashiro, Hirokatsu ^a   Aigo, Takashi ^a   Hirano, Hosei ^a   Hoshino, Taizo ^a   Tatsumi, Kohei ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

A1. Defects; A1. Doping; A1. Surface structure; A2. Growth from vapor; B2. Semiconducting silicon compounds

Indexed keywords

DEFECT DENSITY; DEFECTS; DOPING (ADDITIVES); GROWTH KINETICS; GROWTH TEMPERATURE; MOSFET DEVICES; NITROGEN; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; STABILITY; STACKING FAULTS; SUBSTRATES; SULFUR COMPOUNDS; SURFACE ROUGHNESS; SURFACE STRUCTURE; VAPORS;

A1. DEFECTS; A1. DOPING; A1. SURFACE STRUCTURE; A2. GROWTH FROM VAPOR; B2. SEMICONDUCTING SILICON COMPOUNDS;

SINGLE CRYSTALS;

EID: 62549120008     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.119     Document Type: Article

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