Organic thin-film transistor performance improvement using ammonia (NH3) plasma treatment on the gate insulator surface

Solid-State Electronics

Volumn 53, Issue 2, 2009, Pages 246-250

  Fan, Ching Lin ^a   Yang, Tsung Hsien ^a   Chiu, Ping Cheng ^a   Huang, Cheng Han ^a   Lin, Cheng I ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Gate insulator treatment; Interface trap state density; NH3 plasma; Organic thin film transistor; Pentacene

Indexed keywords

CHEMICAL SENSORS; DANGLING BONDS; PLASMA APPLICATIONS; PLASMA DEPOSITION; PLASMAS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

GATE INSULATOR TREATMENT; INTERFACE TRAP-STATE DENSITY; NH3-PLASMA; ORGANIC THIN-FILM TRANSISTOR; PENTACENE;

SURFACE TREATMENT;

EID: 58349111142     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.11.013     Document Type: Article

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