Performance enhancement of organic thin-film transistors by low-energy argon ion beam treatment of gate dielectric surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2696-2699

  Kang, Sungku ^a,c   Park, Jaeyoung ^a   Jung, Sukmo ^a   Lee, Hoo Jeong ^b   Son, Philkook ^a   Kim, Jae Chang ^a   Yoon, Tae Hoon ^a   Yi, Moonsuk ^a  

^a Pusan National University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Samsung SDI   (South Korea)

Author keywords

Argon ion beam; O2 plasma; Organic thin film transistors; OTFT; Pentacene; Surface treatment

Indexed keywords

ATOMIC FORCE MICROSCOPY; GATE DIELECTRICS; ION BEAMS; SILICA; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRIC LAYER; PENTACENE; PLASMA CLEANING;

THIN FILM TRANSISTORS;

EID: 34547915663     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2696     Document Type: Article

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