SCOPUS 정보 검색 플랫폼

Physics of Plasmas

Volumn 18, Issue 2, 2011, Pages

Observation of pressure gradient and related flow rate effect on the plasma parameters in plasma processing reactor

(4) Lee, Hyo Chang a Kim, Aram a Moon, Se Youn b Chung, Chin Wook a

a Hanyang University (South Korea)

b LG Electronics Inc (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY DISTRIBUTION FUNCTIONS; GAS FLOWRATE; GAS PRESSURES; GAS RESIDENCE; PLASMA PARAMETER; PLASMA PROCESS; PLASMA PROCESSING; PLASMA PROCESSING REACTORS; PUMPING PORTS; RATE EFFECTS; REACTIVE RADICALS;

DISTRIBUTION FUNCTIONS; PLASMA DENSITY; PLASMA DEVICES; PLASMAS; PRESSURE EFFECTS; PRESSURE GRADIENT; SURFACE REACTIONS;

ELECTRIC DISCHARGES;

EID: 79952128515 PISSN: 1070664X EISSN: None Source Type: Journal
DOI: 10.1063/1.3546011 Document Type: Article

Times cited : (21)

References (18)

1
- 0017946145
- 0022-5355, 10.1116/1.569583
- B. N. Chapman and V. J. Minkiewicz, J. Vac. Sci. Technol. 0022-5355 15, 329 (1978). 10.1116/1.569583
- (1978) J. Vac. Sci. Technol. , vol.15 , pp. 329
- Chapman, B.N.¹ Minkiewicz, V.J.²

2
- 0000720859
- 0003-6951, 10.1063/1.110647
- K. Tsujimoto, T. Kumihashi, and S. Tachi, Appl. Phys. Lett. 0003-6951 63, 1915 (1993). 10.1063/1.110647
- (1993) Appl. Phys. Lett. , vol.63 , pp. 1915
- Tsujimoto, K.¹ Kumihashi, T.² Tachi, S.³

3
- 0000210389
- 0003-6951, 10.1063/1.112513
- S. Tanaka, R. S. Kern, and R. F. Davis, Appl. Phys. Lett. 0003-6951 65, 2851 (1994). 10.1063/1.112513
- (1994) Appl. Phys. Lett. , vol.65 , pp. 2851
- Tanaka, S.¹ Kern, R.S.² Davis, R.F.³

4
- 33750800866
- Effects of gas flow rate on diamond deposition in a microwave plasma reactor
- DOI 10.1016/j.tsf.2006.08.007, PII S0040609006009977
- W. Chen, X. Lu, Q. Yang, C. Xiao, R. Sammynaiken, J. Maley, and A. Hirose, Thin Solid Films 0040-6090 515, 1970 (2006). 10.1016/j.tsf.2006.08.007 (Pubitemid 44716196)
- (2006) Thin Solid Films , vol.515 , Issue.4 , pp. 1970-1975
- Chen, W.¹ Lu, X.² Yang, Q.³ Xiao, C.⁴ Sammynaiken, R.⁵ Maley, J.⁶ Hirose, A.⁷

5
- 38649113589
- Effect of gas flow rates on PECVD-deposited nanocrystalline silicon thin film and solar cell properties
- DOI 10.1016/j.solmat.2007.09.013, PII S092702480700373X
- A. Chowdhury, S. Mukhopadhyay, and S. Ray, Sol. Energy Mater. Sol. Cells 0927-0248 92, 385 (2008). 10.1016/j.solmat.2007.09.013 (Pubitemid 351172748)
- (2008) Solar Energy Materials and Solar Cells , vol.92 , Issue.4 , pp. 385-392
- Chowdhury, A.¹ Mukhopadhyay, S.² Ray, S.³

6
- 0033076099
- 0963-0252, 10.1088/0963-0252/8/1/003
- J. T. Gudmundsson, T. Kimura, and M. A. Lieberman, Plasma Sources Sci. Technol. 0963-0252 8, 22 (1999). 10.1088/0963-0252/8/1/003
- (1999) Plasma Sources Sci. Technol. , vol.8 , pp. 22
- Gudmundsson, J.T.¹ Kimura, T.² Lieberman, M.A.³

7
- 75749096988
- 1070-664X, 10.1063/1.3266418
- H. C. Lee, M. H. Lee, and C. W. Chung, Phys. Plasmas 1070-664X 17, 013501 (2010). 10.1063/1.3266418
- (2010) Phys. Plasmas , vol.17 , pp. 013501
- Lee, H.C.¹ Lee, M.H.² Chung, C.W.³

8
- 67749135776
- 1612-8850, 10.1002/ppa200800219
- S. Longo and P. Diomede, Plasma Processes Polym. 1612-8850 6, 370 (2009). 10.1002/ppap.200800219
- (2009) Plasma Processes Polym. , vol.6 , pp. 370
- Longo, S.¹ Diomede, P.²

9
- 77249166678
- 0003-6951, 10.1063/1.3293295
- H. C. Lee, M. H. Lee, and C. W. Chung, Appl. Phys. Lett. 0003-6951 96, 071501 (2010). 10.1063/1.3293295
- (2010) Appl. Phys. Lett. , vol.96 , pp. 071501
- Lee, H.C.¹ Lee, M.H.² Chung, C.W.³

10
- 77950557337
- 1070-664X, 10.1063/1.3361199
- H. C. Lee, J. K. Lee, and C. W. Chung, Phys. Plasmas 1070-664X 17, 033506 (2010). 10.1063/1.3361199
- (2010) Phys. Plasmas , vol.17 , pp. 033506
- Lee, H.C.¹ Lee, J.K.² Chung, C.W.³

11
- 36149029741
- 0963-0252, 10.1088/0963-0252/1/1/006
- V. A. Godyak, R. B. Piejak, and B. M. Alexandrovich, Plasma Sources Sci. Technol. 0963-0252 1, 36 (1992). 10.1088/0963-0252/1/1/006
- (1992) Plasma Sources Sci. Technol. , vol.1 , pp. 36
- Godyak, V.A.¹ Piejak, R.B.² Alexandrovich, B.M.³

12
- 0034317038
- Nonlocal electron kinetics in a planar inductive helium discharge
- DOI 10.1103/PhysRevE.62.7155
- S. H. Seo, C. W. Chung, J. I. Hong, and H. Y. Chang, Phys. Rev. E 1063-651X 62, 7155 (2000). 10.1103/PhysRevE.62.7155 (Pubitemid 32033193)
- (2000) Physical Review E - Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics , vol.62 , Issue.B5 , pp. 7155-7167
- Seo, S.-H.¹ Chung, C.-W.² Hong, J.-I.³ Chang, H.-Y.⁴

13
- 79956033873
- Heating-mode transition in the capacitive mode of inductively coupled plasmas
- DOI 10.1063/1.1456263
- C. W. Chung and H. Y. Chang, Appl. Phys. Lett. 0003-6951 80, 1725 (2002). 10.1063/1.1456263 (Pubitemid 34635874)
- (2002) Applied Physics Letters , vol.80 , Issue.10 , pp. 1725
- Chung, C.¹ Chang, H.-Y.²

14
- 0003730831
- 2nd ed. (Wiley, New York)
- M. A. Lieberman and A. J. Lichtenberg, Principle of Plasma Discharges and Materials Processing, 2nd ed. (Wiley, New York, 2004).
- (2004) Principle of Plasma Discharges and Materials Processing
- Lieberman, M.A.¹ Lichtenberg, A.J.²

15
- 0000468232
- 0031-9007, 10.1103/PhysRevLett.65.996
- V. A. Godyak and R. B. Piejak, Phys. Rev. Lett. 0031-9007 65, 996 (1990). 10.1103/PhysRevLett.65.996
- (1990) Phys. Rev. Lett. , vol.65 , pp. 996
- Godyak, V.A.¹ Piejak, R.B.²

16
- 0032514087
- 0031-9007, 10.1103/PhysRevLett.81.369
- V. A. Godyak and V. I. Kolobov, Phys. Rev. Lett. 0031-9007 81, 369 (1998). 10.1103/PhysRevLett.81.369
- (1998) Phys. Rev. Lett. , vol.81 , pp. 369
- Godyak, V.A.¹ Kolobov, V.I.²

17
- 75749111302
- 0003-6951, 10.1063/1.3291038
- H. C. Lee, M. H. Lee, and C. W. Chung, Appl. Phys. Lett. 0003-6951 96, 041503 (2010). 10.1063/1.3291038
- (2010) Appl. Phys. Lett. , vol.96 , pp. 041503
- Lee, H.C.¹ Lee, M.H.² Chung, C.W.³

18
- 71049175892
- (Wiley-VCH Verlag, Weinheim)
- K. Jousten, Handbook of Vacuum Technology (Wiley-VCH Verlag, Weinheim, 2008).
- (2008) Handbook of Vacuum Technology
- Jousten, K.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.