Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates

Applied Physics Letters

Volumn 98, Issue 8, 2011, Pages

  Feng, I W ^a   Cao, X K ^a   Li, J ^a   Lin, J Y ^a   Jiang, H X ^a   Sawaki, N ^b   Honda, Y ^c   Tanikawa, T ^c   Zavada, J M ^d  

^a Texas Tech University   (United States)

^b AICHI INSTITUTE OF TECHNOLOGY   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

^d POLYTECHNIC UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; EMISSION INTENSITY; ERBIUM DOPED; GAN TEMPLATE; HIGH POTENTIAL; INGAN ALLOY; METALORGANIC CHEMICAL VAPOR DEPOSITION; ON-CHIP INTEGRATION; PHOTOLUMINESCENCE EMISSION; PHOTONIC PROPERTIES; SELECTIVE AREA GROWTH; SI (001) SUBSTRATE; WURTZITES; X-RAY DIFFRACTION MEASUREMENTS;

EPITAXIAL FILMS; ERBIUM; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLIC COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS DEVICES; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTONIC DEVICES; PHOTONIC INTEGRATION TECHNOLOGY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; SILICON; SILICON ALLOYS; X RAY DIFFRACTION; ZINC SULFIDE;

ERBIUM ALLOYS;

EID: 79952076416     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3556678     Document Type: Article

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