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Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

Current-injected 1.54 μm light emitting diodes based on erbium-doped GaN

(5) Dahal, R a Ugolini, C a Lin, J Y b Jiang, H X b Zavada, J M c

a KANSAS STATE UNIVERSITY (United States)

b Department of Electrical and Computer Engineering (United States)

c North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ERBIUM; FIBER AMPLIFIERS; FIBER LASERS; FIBER OPTICS; GALLIUM ALLOYS; GALLIUM NITRIDE; ION BEAM ASSISTED DEPOSITION; LIGHT AMPLIFIERS; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; METALLIZING; METALS; NITRIDES; OPTICAL DESIGN; OPTICAL PUMPING; OPTICAL SWITCHES; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; PHOTONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SUGAR (SUCROSE); TELECOMMUNICATION;

AMERICAN INSTITUTE OF PHYSICS (AIP); ELECTRICALLY PUMPED; EMISSION INTENSITIES; ER DOPED FIBER AMPLIFIER (EDFA); ER-DOPED; ERBIUM-DOPED; FORWARD CURRENTS; GAN EPILAYERS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); OPTICAL (PET) (OPET);

OPTICAL COMMUNICATION;

EID: 48249144847 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2955834 Document Type: Article

Times cited : (24)

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