Temperature dependent morphology transition of GaN films

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 345-350

  Zauner, A R A ^a   De Theije, F K ^a   Hageman, P R ^a   Van Enckevort, W J P ^a   Schermer, J J ^a   Larsen, P K ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHASE TRANSITIONS; PRESSURE EFFECTS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; SURFACES;

GROWTH RATES; GROWTH TEMPERATURE; LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0033357779     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-345     Document Type: Conference Paper

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