Breakdown phenomena of Al-based high- k dielectric/ SiO2 stack on 4H-SiC

Applied Physics Letters

Volumn 94, Issue 23, 2009, Pages

  Kumta, A ^a   Rusli, E ^a   Xia, J H ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN PHENOMENA; HIGH-K DIELECTRIC; INTERMEDIATE LAYERS; METAL INSULATOR SEMICONDUCTOR CAPACITORS; MIS CAPACITORS; MULTI-STEP; THERMAL SIO2;

ALUMINA; ALUMINUM NITRIDE; CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; METAL INSULATOR BOUNDARIES; MIS DEVICES; NITRIDES; PLATE METAL; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON CARBIDE; SWITCHING CIRCUITS;

ALUMINUM;

EID: 67649105597     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3151917     Document Type: Article

References (13)

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