The Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices

Synthetic Metals

Volumn 161, Issue 5-6, 2011, Pages 474-480

  Dökme, Ilbilge ^a   Tunc T ^b   Uslu, I ^c   Altindal, S ^a  

^a GAZI UNIVERSITY   (Turkey)

^b AKSARAY UNIVERSITY   (Turkey)

^c SELCUK UNIVERSITY   (Turkey)

Author keywords

Au PVA (Co, Zn doped) n Si; Electrical properties; Electrospinning technique; FT IR

Indexed keywords

AU/PVA (CO, ZN-DOPED)/N-SI; CAPACITANCE VOLTAGE; CONTACT POTENTIAL; DENSITY OF INTERFACE STATE; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTIES; ELECTROSPINNING TECHNIQUE; ELECTROSPINNING TECHNIQUES; FREQUENCY RANGES; FT-IR; FUNCTION OF FREQUENCY; HIGH FREQUENCY HF; INORGANIC SEMICONDUCTORS; INTERFACE STATE; INTERFACIAL LAYER; IV CHARACTERISTICS; N TYPE SILICON; NANOFIBER FILMS; REVERSE BIAS; ROOM TEMPERATURE; SCHOTTKY BARRIERS; SCHOTTKY-BARRIER DEVICES; SERIES RESISTANCES;

BIAS VOLTAGE; CAPACITANCE; COBALT; ELECTROSPINNING; MOS CAPACITORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; ZINC;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79951948898     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2011.01.002     Document Type: Article

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