Deep level transient spectroscopy (DLTS) of a poly(p-phenylene vinylene) Schottky diode

Synthetic Metals

Volumn 111, Issue , 2000, Pages 273-276

  Campbell, A J ^a   Bradley, D D C ^a   Werner, E ^b   Brutting W ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSITY OF BAYREUTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTROLUMINESCENCE; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; HOLE TRAPS; INTERFACES (MATERIALS); LIGHT EMITTING DIODES; SEMICONDUCTING POLYMERS; VINYL RESINS;

CAPACITANCE TRANSIENTS; CHARGE TRAPS; ENERGY TRAP LEVEL; GAUSSIAN DISTRIBUTION OF TRANSPORT STATES; INDIUM TRIOXIDES; POLYPHENYLENEVINYLENE;

SCHOTTKY BARRIER DIODES;

EID: 0033703033     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(99)00446-4     Document Type: Article

References (10)

1. Lang D.V. J. Appl. Phys. 45:1974;3023.
2. Blood P., Orton J.W. The Electrical Characterisation of Semiconductors: Majority Carriers and Electron States. 1992;Academic Press, London.
3. Campbell A.J., Bradley D.D.C., Lidzey D.G. J. Appl. Phys. 82:1997;6326.
4. Meier M., Karg S., Reiss W. J. Appl. Phys. 82:1997;1961.
5. Rauscher U., Bässler H., Bradley D.D.C., Hennecke M. Phys. Rev. B. 42:1990;9830.
6. Conwell E.M., Gartstein Y.N. SPIE. 2528:1995;23.
7. Borsenberger P.M., Weiss D.S. Organic Photoreceptors for Xerography. 1998;Marcel Dekker, New York.
8. Lebedev E., Dittrich Th., Petrova-Koch V., Karg S., Brütting W. Appl. Phys. Lett. 71:1997;2686.
9. Meier M., Karg S., Zuleeg K., Brütting W., Schwoerer M. J. Appl. Phys. 84:1998;87.
10. Xing K., Fahlman M., Lögdlund M., dos Santos D.A., Parenté V., Lazzaroni R., Brédas J.L., Gymer R.W., Salaneck W.R. Adv. Mater. 8:1996;971.