Characterization of defects in undoped non c-plane and high resistance GaN layers dominated by stacking faults

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4922-4924

  Witte, H ^a   Guenther, K M ^a   Wieneke, M ^a   Blaesing, J ^a   Dadgar, A ^a   Krost, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

a Plane GaN; Deep defects; Photocurrent; Photoluminescence; TSC

Indexed keywords

A-PLANE GAN; BASAL STACKING FAULTS; CORRELATED SIGNALS; DEEP DEFECTS; DEEP TRAPS; DONOR-ACCEPTOR PAIRS; GAN LAYERS; HIGH CONCENTRATION; HIGH-RESISTANCE GAN; MOVPE; NEAR BAND EDGE EMISSIONS; PL SPECTRA; SAPPHIRE SUBSTRATES; STRONG TRAPS; TEMPERATURE RANGE; THERMALLY STIMULATED CURRENT SPECTROSCOPY;

ACTIVATION ENERGY; DEFECTS; GALLIUM NITRIDE; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; STACKING FAULTS;

GALLIUM ALLOYS;

EID: 74349121338     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.269     Document Type: Article

References (12)

1. Romanov A.E., Baker T.J., Nakamura S., and Speck J.S. J. Appl. Phys. 100 (2006) 023522
2. Wieneke M., Blaesing J., Dadgar A., Veit P., Metzner S., Bertram F., Christen J., and Krost A. Phys. Status Solidi C 6 (2009) 498
3. Paskov P.P., Schifano R., Monemar B., Paskova T., Figge S., and Hommel D. J. Appl. Phys. 98 (2005) 093519
4. Bastek B., Bertram F., Christen J., Wernicke T., Weyers M., and Kneissl M. Appl. Phys. Lett. 92 (2008) 212111
5. Polyakov A.Y., Smirnov N.B., Govorkov A.V., Markov A.V., Yakimov E.B., Vergeles P.S., Amano H., and Kawashima T. J. Cryst. Growth 311 (2009) 2933
6. Kisielowski C., et al. Phys. Rev B 54 (1996) 17745
7. Krtschil A., Lisker M., Witte H., Christen J., Birkle U., Einfeldt S., and Hommel D. Mater. Sci. Eng. B 59 (1999) 226
8. Bube H. Photoelectronic Properties of Semiconductors (1992), Cambridge University Press, Cambridge
9. Witte H., Krtschil A., Lisker M., Christen J., Krost A., Kuhn B., and Scholz F. Appl. Phys. Lett. 82 (2003) 4083
10. Desnica U.V., Üavlovic M., Fang Z.-Q., and Look D.C. J. Appl. Phys. 92 (2002) 4126
11. Soh C.B., Chua S.J., Lim H.F., Chi D.Z., Tripathy S., and Lio W. J. Appl. Phys. 96 (2004) 1341
12. Kuriyama K., Ooi M., Onoue A., Kushida K., Okada M., and Xu Q. Appl. Phys. Lett. 88 (2006) 132109