Atomic layer deposition enabled interconnect technology for vertical nanowire arrays

Sensors and Actuators, A: Physical

Volumn 165, Issue 1, 2011, Pages 107-114

  Cheng, Jen Hau ^a,b   Seghete, Dragos ^b   Lee, Myongjai ^a,b   Schlager, John B ^b,c   Bertness, Kris A ^b,c   Sanford, Norman A ^b,c   Yang, Ronggui ^a,b   George, Steven M ^b   Lee, Y C ^a,b  

^a UCB 450   (United States)

^b UNIVERSITY OF COLORADO   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Atomic layer deposition (ALD); Focused ion beam (FIB); GaN nanowires; Interconnect; Photoluminescence (PL)

Indexed keywords

BENZOCYCLOBUTENE; BIOMEDICAL APPLICATIONS; CO-AXIAL; CONFORMALITY; CROSS SECTIONAL IMAGE; FABRICATION PROCESS; FOCUSED ION BEAM (FIB); GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; INPUT CURRENT; INTERCONNECT; INTERCONNECT TECHNOLOGY; METALLIZATIONS; NANOWIRE ARRAYS; NANOWIRES ARRAYS;

ATOMIC LAYER DEPOSITION; ATOMS; BEAM PLASMA INTERACTIONS; BUTENES; FIELD EFFECT TRANSISTORS; FOCUSED ION BEAMS; GALLIUM ALLOYS; GALLIUM NITRIDE; ION BOMBARDMENT; IONS; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; TUNGSTEN;

NANOWIRES;

EID: 79951774643     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2009.12.038     Document Type: Conference Paper

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