Band structure and optical gain of InGaAsN/GaAsP/GaAs strained quantum wells

Physica Status Solidi C: Conferences

Volumn 2, Issue 8, 2005, Pages 3023-3026

  Carrere H ^a   Marie, X ^a   Barrau, J ^a   Amand, T ^a  

^a INSA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRENGTH; ELECTRONIC PROPERTIES; GALLIUM COMPOUNDS; MATHEMATICAL MODELS; SEMICONDUCTOR QUANTUM WELLS; TENSILE STRENGTH;

COMPRESSIVE STRAIN; HOLE LEAKAGE; MATERIAL GAIN; TENSILE STRAIN;

INDIUM COMPOUNDS;

EID: 27344448585     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200460759     Document Type: Conference Paper

References (17)

1. W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, Phys. Rev. Lett. 82(6), 1221 (1999).
2. K. Kim and A. Zunger, Phys. Rev. Lett. 86(12), 2609 (2001).
3. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Wakahiki, and Y. Yazawa, Jpn. J. Appl. Phys. 35, No. 2B, 1273 (1996).
4. M. Hofmann, A. Wagner, C. Ellmers, C. Schlichenmeier, S. Schafer, F. Hohnsdorf, J. Koch, W. Stolz, S. W. Koch, W. Ruhle, J. Hader, J. V. Moloney, E. P. O'Reilly, B. Borchert, A. Y. Egorov, and H. Riechert, Appl. Phys.. Lett. 78(20), 3009 (2001).
5. N. Tansu, J. Y. Yeh, and L. J. Mawst, Appl. Phys. Lett. 83(11), 2112 (2003).
6. M. Weyers, M. Sato, and H. Ando, Jpn. J. Appl. Phys. Pt. 2, 31, No. 7A, L853 (1992).
7. A. Ougazzaden, Y. Le Bellego, E. V. K. Rao, M. Juhel, L. Leprince, and G. Patriarche, Appl. Phys. Lett. 70(21), 2861 (1997).
8. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, Y. Yazawa, K. Hosomi, and T. Mozume, Solid State Electron. 41, No. 2, 209 (1997).
9. H. P. Xin, C. W. Tu, Appl. Phys. Lett. 72, No. 19, 2442 (1998).
10. E. V. K. Rao, A. Ougazzaden, Y. Le Bellego, and M. Juhel, Appl. Phys. Lett. 72(12), 1409 (1998).
11. X. Yang, J. B. Heroux, M. J. Jurkovic, and W. I. Wang, J. Vac. Sci. Technol. B 17(3), 1144 (1999).
12. R. Epenga, M. F. H. Schuurmans, and S. Colak, Phys. Rev. B 36, 1554 (1987).
13. D. Ahn, S. L. Chuang, IEEE J. Quantum Electron. 26, No. 1, 13 (1990).
14. X. Marie, J. Barrau, B. Brousseau, T. Amand, M. Brousseau, E. V. K. Rao, F. Alexandre, J. Appl. Phys. 69(2), 812 (1991).
15. W. Shan, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, S. R. Kurtz, H. P. Xin, and C. W. Tu, phys. stat. sol. (b) 223, 75 (2001).
16. H. Carrère, X. Marie, J. Barrau, T. Amand, S. Ben Bouzid, V. Sallet, and J.-C. Harmand, J. Phys.: Condens. Matter, to be published, 2004.
17. O. Issanchou, J. Barrau, X. Marie, J. Y. Emery, C. Fortin, and L. Goldstein, IEEE J. Quantum Electron. 33(12), 2277 (1997).