Emerging N-face GaN HEMT technology: A cellular Monte Carlo study

IEEE Transactions on Electron Devices

Volumn 57, Issue 10, 2010, Pages 2579-2586

  Marino, Fabio Alessio ^a   Saraniti, Marco ^a   Faralli, Nicolas ^a   Ferry, David K ^a   Goodnick, Stephen M ^a   Guerra, Diego ^a  

^a Arizona State University   (United States)

Author keywords

Enhancement mode; GaN; high electron mobility transistor (HEMT); high frequency; Monte Carlo; N face; numerical simulation

Indexed keywords

ENHANCEMENT MODES; GAN; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH FREQUENCY; MONTE CARLO; N-FACE; NUMERICAL SIMULATION;

COMPUTER SIMULATION; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; MILLIMETER WAVE DEVICES; MONTE CARLO METHODS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77957002822     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2058791     Document Type: Article

References (26)

1. M. Sumiya, K. Yoshimura, T. Ito, K. Ohtsuka, S. Fuke, K. Mizuno, M. Yoshimoto, H. Koinuma, A. Ohtomo, and M. Kawasaki, "Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate," J. Appl. Phys., vol.88, no.2, pp. 1158-1165, Jul. 2000.
2. S. Rajan, A. Chini, M. H. Wong, J. Speck, and U. Mishra, "N-polar GaN/AlGaN/GaN high electron mobility transistors," J. Appl. Phys., vol.102, no.4, p. 044 501, Aug. 2007.
3. S. Keller, C. Suh, Z. Chen, R. Chu, N. Fichtenbaum, M. Furukawa, S. DenBaars, J. Speck, and U. Mishra, "Properties of N-polar AlGaN/ GaN heterostructures and field effect transistors grown by metalorganic chemical vapour deposition," J. Appl. Phys., vol.103, no.3, p. 033 708, Feb. 2008.
4. J. Chung, E. Piner, and T. Palacios, "N-face GaN/AlGaN HEMTs fabricated through layer transfer technology," IEEE Electron Device Lett., vol.30, no.2, pp. 113-116, Feb. 2009.
5. M. H.Wong, Y. Pei, T. Palacios, L. Shen, A. Chakraborty, L. S.McCarthy, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Low nonalloyed ohmic contact resistance to nitride high electron mobility transistors using N-face growth," Appl. Phys. Lett., vol.91, no.23, p. 232 103, Dec. 2007.
6. T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, "AlGaN/GaN high electron mobility transistors with InGaN back-barriers," IEEE Electron Device Lett., vol.27, no.1, pp. L475-L478, Jan. 2006.
7. K. Xu and A. Yoshikawa, "Effects of film polarities on InN growth by molecular-beam epitaxy," Appl. Phys. Lett., vol.83, no.2, pp. 251-253, Jul. 2003.
8. M. Wong, Y. Pei, R. Chu, S. Rajan, B. Swenson, D. Brown, S. Keller, S. DenBaars, J. Speck, and U. Mishra, "N-face metal-insulator- semiconductor high-electron-mobility transistors with AlN back-barrier," IEEE Electron Device Lett., vol.29, no.10, pp. 1101-1104, Oct. 2008.
9. U. K. Mishra, "Status of AlGaN/GaN HEMT technology-A UCSB perspective," in Proc. 13th GAAS Symp., 2005, pp. 21-27.
10. S. Rajan, M. Wong, Y. Fu, F. Wu, J. S. Speck, and U. K. Mishra, "Growth and electrical characterization of N-face AlGaN/GaN heterostructures," Jpn. J. Appl. Phys., vol.44, no.46-49, pp. L1 478-L1 480, 2005.
11. Nidhi, S. Dasgupta, Y. Pei, B. Swenson, D. Brown, S. Keller, J. Speck, and U. Mishra, "ft and fmax of 47 and 81 GHz, respectively, on n-polar GaN/AlN MIS-HEMT," IEEE Electron Device Lett., vol.30, no.6, pp. 599-601, Jun. 2009.
12. S. Kolluri, Y. Pei, S. Keller, S. Denbaars, and U.Mishra, "RF performance of N-polar AlGaN/GaN MIS-HEMTs grown by MOCVD on sapphire substrate," IEEE Electron Device Lett., vol.30, no.6, pp. 584-586, Jun. 2009.
13. C. K. Birdsall and D. Fuss, "Clouds-in-clouds, clouds-in-cells physics for many-body plasma simulation," J. Comput. Phys., vol.135, no.2, pp. 141-148, Aug. 1997.
14. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, M. M. K. Chu, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures," J. Appl. Phys., vol.85, no.6, pp. 3222- 3323, Mar. 1999.
15. O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. Eastman, "Pyroelectric properties of Al(In)GaN/GaN hetero and quantum well structures," J. Phys., Condens. Matter, vol.14, no.13, pp. 3399-3434, Apr. 2002.
16. F. A. Marino, D. A. Cullen, D. J. Smith,M. R.McCartney, and M. Saraniti, "Simulation of polarization charge on AlGaN/GaN high electron mobility transistors: Comparison to electron holography," J. Appl. Phys., vol.107, no.5, p. 054 516, Mar. 2010.
17. O. Ambacher, B. Foutz, J. Smart, J. Shealy, N. Weimann, K. Chu, M. Murphy, A. Sierakowski, W. Schaff, L. Eastman, R. Dimitrov, A. Mitchell, andM. Stutzmann, "Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures, " J. Appl. Phys., vol.87, no.1, pp. 334-344, Jan. 2000.
18. M. Saraniti and S. Goodnick, "Hybrid full-band cellular automaton/ Monte Carlo approach for fast simulation of charge transport in semiconductors," IEEE Trans. Electron Devices, vol.47, no.10, pp. 1909-1915, Oct. 2000.
19. S. Yamakawa, "Transport modeling in GaN materials and devices based on full-band cellular Monte Carlo simulation," Ph.D. dissertation, Arizona State Univ., Phoenix, AZ, 2003.
20. W. Hackbusch, "The frequency decomposition multi-grid algorithm," in Robust Multi-Grid Methods. Proceedings of the Fourth GAMM-Seminar, Kiel, January 22 to 24, 1988, W. Hackbusch, Ed. Braunschweig, Germany: Fried. Vieweg & Sohn, 1989, ser. Notes on Numerical Fluid Mechanics, pp. 96-105.
21. D. Ferry, "The onset of quantization in ultra-submicron semiconductor devices," Superlatt. Microstruct., vol. 27, no. 2/3, pp. 61-66, Feb. 2000.
22. U. Karrer, O. Ambacher, and M. Stutzmann, "Influence of crystal polarity on the properties of Pt/GaN Schottky diodes," Appl. Phys. Lett., vol.77, no.13, pp. 2012-2014, Sep. 2000.
23. I. Knezevic, D. Vasileska, and D. Ferry, "Impact of strong quantum confinement on the performance of a highly asymmetric device structure: Monte Carlo particle-based simulation of a focused-ion-beam MOSFET," IEEE Trans. Electron Devices, vol.49, no.6, pp. 1019-1026, Jun. 2002.
24. F. A. Marino, N. Faralli, T. Palacios, D. K. Ferry, S. M. Goodnick, and M. Saraniti, "Effects of threading dislocations on AlGaN/GaN high electron mobility transistors," IEEE Trans. Electron Devices, vol.57, no.1, pp. 353-360, Jan. 2010.
25. F. Schwierz and J. J. Liou, Modern Microwave Transistors, Theory, Design and Performance. New York: Wiley-Interscience, 2003.
26. R. Akis, J. Ayubi-Moak, N. Faralli, D. K. Ferry, S. M. Goodnick, and M. Saraniti, "The upper limit of the cutoff frequency in ultrashort gate-length InGaAs/InAlAs HEMTs: A new definition of effective gate length," IEEE Electron Device Lett., vol.29, no.4, pp. 306-308, Apr. 2008.