High performance E-mode InAIN/GaN HEMTs: Interface states from subthreshold slopes

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2010, Pages 129-130

  Wang, Ronghua ^a   Xing, Xiu ^a   Fang, Tian ^a   Zimmermann, Tom ^a   Lian, Chuanxin ^a   Li, Guowang ^a   Saunier, Paul ^b   Gao, Xiang ^c   Guo, Shiping ^c   Snider, Gregory ^a   Fay, Patrick ^a   Jena, Debdeep ^a   Xing, Huili ^a  

^a University of Notre Dame   (United States)

^b TRIQUINT SEMICONDUCTOR   (United States)

^c IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; ENHANCEMENT-MODE; EXTRINSIC TRANSCONDUCTANCE; FIELD-EFFECT; GATE LENGTH; GATE RECESS TECHNOLOGY; HIGH TEMPERATURE STABILITY; HIGH-FREQUENCY ELECTRONICS; HIGH-POWER; INTERFACE STATE; LATTICE-MATCHED; MIXED SIGNAL APPLICATIONS; SUBTHRESHOLD SLOPE; TEMPERATURE DEPENDENT; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

DIGITAL DEVICES; ELECTRON GAS; ELECTRON MOBILITY; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77957572882     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2010.5551875     Document Type: Conference Paper

References (5)

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3. Paul Saunier et al, GOMACTech, Reno (2010).
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