Amorphous silicon waveguides grown by PECVD on an Indium Tin Oxide buried contact

Proceedings of the Mediterranean Electrotechnical Conference - MELECON

Volumn , Issue , 2010, Pages 1465-1469

  Rao, Sandro ^a   Corte, Francesco G Della ^a   Summonte, Caterina ^b  

^a UNIVERSITY MEDITERRANEA OF REGGIO CALABRIA   (Italy)

^b CNR Consiglio Nazionale delle Ricerche   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

1550 NM; ACTIVE DEVICES; AMORPHOUS SILICON WAVEGUIDES; BURIED CONTACT; EXPERIMENTAL DATA; HIGH EXTINCTION COEFFICIENTS; HYDROGENATED AMORPHOUS SILICON; INDIUM TIN OXIDE; LOW LOSS; METAL CONTACTS; OPTICAL SCATTERING; OPTICAL SIMULATION; OPTICAL TRANSMITTANCE; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; PROPAGATION LOSS; TECHNOLOGICAL SOLUTION; TEXTURIZATION; TRANSPARENT CONDUCTIVE OXIDES;

DATA FLOW ANALYSIS; ELECTRIC LOSSES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SURFACE ROUGHNESS; TIN; TITANIUM COMPOUNDS; WAVEGUIDES;

AMORPHOUS SILICON;

EID: 77954288868     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MELCON.2010.5476232     Document Type: Conference Paper

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