Noise analysis of imagers with a-Si:H pin diode pixels

Journal of Non-Crystalline Solids

Volumn 266-269 B, Issue , 2000, Pages 1188-1192

  Blecher, F ^a   Schneider, B ^a   Sterzel, J ^a   Hillebrand, M ^a   Benthien, S ^b   Bohm M ^a,b  

^a UNIVERSITY OF SIEGEN   (Germany)

^b Silicon Vision GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012205070     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-3093(99)00924-2     Document Type: Article

References (7)

1. B. Schneider, H. Fischer, S. Benthien, H. Keller, T. Lulé, P. Rieve, M. Sommer, J. Schulte, M. Böhm, TFA Image Sensors: From the One Transistor Cell to a Locally Adaptive High Dynamic Range Sensor. IEDM Tech. Dig. (1997) p. 209.
2. F. Blecher, K. Seibel, M. Böhm, Mater. Res. Symp. Proc. 507 (1998) 175.
3. F. Blecher, B. Schneider, J. Sterzel, M. Böhm, Mater. Res. Symp. Proc. vol. 557 (1999).
4. F. Blecher, K. Seibel, M. Hillebrand, M. Böhm, Mater. Res. Symp. Proc. 507 (1998) 169.
5. R. Street, Hydrogenated Amorphous Silicon, Cambridge University, Cambridge, UK, 1991.
6. M. Böhm, these Proceedings, p. 1145.
7. S. Benthien, M. Wagner, M. Verhoeven, M. Böhm, B. Schneider, B. van Uffel, F. Librecht, A vertically integrated high resolution active pixel image sensor for deep submicron CMOS processes, Proc. IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors, Nagano, Japan, 1999, p. 64.